rev.1.00, aug.27.2003, page 1 of 9 H7N1004FM silicon n-channel mosfet high-speed power switching rej03g0073-0100z (previous ade-208-1463a(z)) rev.1.00 aug.27.2003 features ? low on-resistance ? r ds(on) = 25 m ? typ. ? low drive current ? available for 4.5 v gate drive outline 1 2 3 to-220fm 1. gate 2. drain 3. source d g s
H7N1004FM rev.1.00, aug.27.2003, page 2 of 9 absolute maximum ratings (ta = 25 c) item symbol value unit drain to source voltage v dss 100 v gate to source voltage v gss 20 v drain current i d 25 a drain peak current i d (pulse) note1 100 a body-drain diode reverse drain current i dr 100 a avalanche current i ap note 3 15 a avalanche energy e ar note 3 22.5 mj channel dissipation pch note 2 25 w channel temperature tch 150 c storage temperature tstg ?55 to +150 c notes: 1. pw 10 s, duty cycle 1% 2. value at tc = 25 c 3. value at tch = 25 c, rg 50 ?
H7N1004FM rev.1.00, aug.27.2003, page 3 of 9 electrical characteristics (ta = 25 c) item symbol min typ max unit test conditions drain to source breakdown voltage v (br)dss 100 ? ? v i d = 10 ma, v gs = 0 gate to source breakdown voltage v (br)gss 20 ? ? v i g = 100 a, v ds = 0 gate to source leak current i gss ?? 10 av gs = 16 v, v ds = 0 zero gate voltage drain current i dss ??10 av ds = 100 v, v gs = 0 gate to source cutoff voltage v gs(off) 1.5 ? 2.5 v i d = 1 ma, v ds = 10 v note 1 static drain to source on state r ds(on) ?2535m ? i d = 12.5 a, v gs = 10 v note 1 resistance ? 30 45 m ? i d = 12.5 a, v gs = 4.5 v note 1 forward transfer admittance |yfs| 20 35 ? s i d = 12.5 a, v gs = 10 v note 1 input capacitance ciss ? 2800 ? pf v ds = 10 v output capacitance coss ? 240 ? pf v gs = 0 reverse transfer capacitance crss ? 140 ? pf f = 1 mhz total gate charge qg ? 50 ? nc v dd = 50 v gate to source charge qgs ? 9 ? nc v gs = 10 v gate to drain charge qgd ? 11 ? nc i d = 25 a turn-on delay time td(on) ? 23 ? ns v gs = 10 v, i d = 12.5 a rise time tr ? 110 ? ns r l = 2.4 ? turn-off delay time td(off) ? 70 ? ns rg = 4.7 ? fall time tf ? 9.5 ? ns body-drain diode forward voltage v df ?0.89?v i f = 25 a, v gs = 0 body-drain diode reverse recovery time trr ? 45 ? ns i f = 25 a, v gs = 0 dif/dt = 100 a/ s notes: 1. pulse test
H7N1004FM rev.1.00, aug.27.2003, page 4 of 9 main characteristics 30 10 3 1 0.3 0.1 0.1 0.3 1 3 10 30 100 50 40 30 20 10 0 2 46810 50 40 30 20 10 0 1 5 0.03 0.01 100 ta = 25 c 10 v v = 3 v gs 3.5 v tc = 75 c 25 c -25 c drain to source voltage v (v) ds drain current i (a) d maximum safe operation area drain to source voltage v (v) drain current i (a) d typical output characteristics ds pulse test gate to source voltage v (v) gs drain current i (a) typical transfer characteristics d v = 10 v ds pulse test 100 s 1 ms pw = 10 ms (1shot) dc operation (tc = 25 c) 10 s 6 v 4 v operation in this area is limited by r ds(on) 2 34 40 30 20 10 0 50 100 150 200 channel dissipation pch (w) case temperature tc ( c) power vs. temperature derating
H7N1004FM rev.1.00, aug.27.2003, page 5 of 9 1 5 20 100 21050 50 100 200 500 10 20 5 100 80 60 40 20 ?25 0 25 50 75 100 125 150 0 0.01 100 10 100 10 0.1 1 0.01 0.1 1 static drain to source on state resistance vs. drain current 25 c tc = ?25 c 75 c ds v = 10 v pulse test v = 10 v gs v = 4.5 v gs pulse test 5, 10 a 5, 10 a i = 20 a d i = 20 a d drain current i (a) drain to source on state resistance r ds(on) pulse test d (m ? ) static drain to source on state resistance vs. temperature forward transfer admittance vs. drain current case temperature tc ( c) drain current i (a) d static drain to source on state resistance (m ? ) r ds(on) |yfs| (s) forward transfer admittance v = 4.5 v gs 10 v 0.8 0.6 0.4 0.2 0 5 101520 drain to source saturation voltage vs. gate to source voltage 1.0 i = 20 a d 10 a 5 a pulse test gate to source voltage v (v) v (v) ds(on) drain to source saturation voltage gs
H7N1004FM rev.1.00, aug.27.2003, page 6 of 9 01020304050 2000 5000 10000 1000 100 200 500 200 160 120 80 40 0 20 16 12 8 4 20 40 60 80 100 0 1000 100 1 10 0.1 0.3 1 3 10 30 100 20 50 10 v = 0 f = 1 mhz gs ciss coss crss i = 25 a d v ds v gs v = 25 v 50 v 100 v dd v = 100 v 50 v 25 v dd r t d(on) t d(off) t t f v = 10 v, v = 30 v pw = 5 s, duty 1% r = 4.7 ? gs dd g typical capacitance vs. drain to source voltage capacitance c (pf) drain to source voltage v (v) ds dynamic input characteristics switching characteristics drain to source voltage v (v) ds gate to source voltage v (v) gs switching time t (ns) gate charge qg (nc) drain current i (a) d 0.1 0.3 1 3 10 30 100 100 20 50 10 di / dt = 100 a / s v = 0, ta = 25 c gs body-drain diode reverse recovery time reverse recovery time trr (ns) reverse drain current i (a) dr
H7N1004FM rev.1.00, aug.27.2003, page 7 of 9 d. u. t rg i monitor ap v monitor ds v dd 50 ? vin 15 v 0 i d v ds i ap v (br)dss l v dd e = l i 2 1 v v ? v ar ap dss dss dd 2 40 32 24 16 8 25 50 75 100 125 150 0 i = 15 a v = 50 v duty < 0.1 % rg > 50 ap dd ? channel temperature tch ( c) repetitive avalanche energy e ar (mj) maximum avalanche energy vs. channel temperature derating avalanche test circuit avalanche waveform 0 0.4 0.8 1.2 1.6 2.0 50 40 30 20 10 v = 10 v gs 5v pulse test 0, -5 v reverse drain current vs. source to drain voltage reverse drain current i (a) dr source drain voltage v (v) sd
H7N1004FM rev.1.00, aug.27.2003, page 8 of 9 1 0.3 0.1 0.03 0.01 10 100 1 m 10 m 100 m 1 10 dm p pw t d = pw t ch ? c(t) = s (t) ch ? c ch ? c = 5 c/w, tc = 25 c tc = 25 c d = 1 0.5 0.2 0.1 0.05 0.02 0.01 1shot pulse pulse width pw (s) normalized transient thermal impedance s (t) normalized transient thermal impedance vs. pulse width vin monitor d.u.t. vin 10 v r l v = 30 v ds tr td(on) vin 90% 90% 10% 10% vout td(off) vout monitor 90% 10% t f switching time test circuit switching time waveform rg
H7N1004FM rev.1.00, aug.27.2003, page 9 of 9 package dimensions 10.0 0.3 7.0 0.3 3.2 0.2 12.0 0.3 0.6 2.8 0.2 2.5 0.2 17.0 0.3 14.0 1.0 0.5 0.1 2.5 4.45 0.3 5.0 0.3 2.0 0.3 0.7 0.1 2.54 0.5 2.54 0.5 1.2 0.2 1.4 0.2 hitachi code jedec jeita mass (reference value) to-220fm ? conforms 1.8 g as of january, 2003 unit: mm
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